FDP8860: N-Channel PowerTrench® MOSFET 30V, 80A, 2.5mΩ

Description: This N-Channel MOSFET has been designed specifical...
  • This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(on) and fast switching speed.
  • Features
  • Max. RDS(on) = 2.5mΩ at VGS = 10V, ID = 80A
  • Max. RDS(on) = 2.9mΩ at VGS = 4.5V, ID = 80A
  • Low Miller Charge
  • Low Qrr Body Diode
  • UIL Capability (Single Pulse and Repetitive Pulse)
  • RoHS Compliant
  • Applications
  • This product is general usage and suitable for many different applications.
  • DC-DC Conversion
  • Start / Alternator Systems
  • Technical Documentation & Design Resources
    Availability and Samples
    FDP8860
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: N-Channel PowerTrench® MOSFET 30V, 80A, 2.5mΩ
  • Package Type: TO-220-3
  • Package Case Outline: 340AT
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 800
  • Inventory

  • Market Leadtime (weeks):2 to 4
  • Arrow:0
  • Digikey:<1K
  • Mouser:<1K
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 30 
  • VGS Max (V): 20 
  • VGS(th) Max (V): 2.5 
  • ID Max (A): 80 
  • PD Max (W): 254 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ): 2.9 
  • RDS(on) Max @ VGS = 10 V (mΩ): 2.5 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 81 
  • Ciss Typ (pF): 9200 
  • Package Type: TO-220-3 
  • ON Semiconductor Full Web Site