FDP8870: N-Channel PowerTrench® MOSFET 30V, 156A, 4.1mΩ

Description: This N-Channel MOSFET has been designed specifical...
  • This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
  • Features
  • rDS(ON) = 4.1mΩ @ VGS = 10V, ID=35A
  • rDS(ON) = 4.6mΩ @ VGS = 4.5V, ID=35A
  • High performance trench technology for extremely low rDS(ON)
  • Low gate charge
  • High power and current handling capability
  • RoHS Compliant
  • Applications
  • This product is general usage and suitable for many different applications.
  • DC/DC Converter
  • Technical Documentation & Design Resources
    Availability and Samples
    FDP8870
  • Status: Active
  • Compliance: Pb-free 
  • Description: N-Channel PowerTrench® MOSFET 30V, 156A, 4.1mΩ
  • Package Type: TO-220-3
  • Package Case Outline: 340AT
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 800
  • Inventory

  • Market Leadtime (weeks):2 to 4
  • Arrow:0
  • Avnet:<100
  • Digikey:<100
  • Mouser:>1K
  • Newark:<100
  • Newark:<100
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 30 
  • VGS Max (V): 20 
  • VGS(th) Max (V): 2.5 
  • ID Max (A): 156 
  • PD Max (W): 160 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ): 4.6 
  • RDS(on) Max @ VGS = 10 V (mΩ): 4.1 
  • Qg Typ @ VGS = 4.5 V (nC): 30 
  • Qg Typ @ VGS = 10 V (nC): 56 
  • Ciss Typ (pF): 5200 
  • Package Type: TO-220-3 
  • ON Semiconductor Full Web Site