FDPF5N50NZU: Power MOSFET, N-Channel, UniFETTM II, Ultra FRFETTM, 500 V, 3.9 A, 2.0 Ω, TO-220F

Description: UniFETTM II MOSFET is Fairchild Semicon...
  • UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. UniFET II Ultra FRFETTM MOSFET has much superior body diode reverse recovery performance. Its trr is less than 50nsec and the reverse dv/dt immunity is 20V/nsec while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore UniFET II Ultra FRFET MOSFET can remove additional component and improve system reliability in certain applications that require performance improvement of the MOSFET’s body diode. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
  • Features
  • RDS(on) = 1.7Ω ( Typ.)@ VGS = 10V, ID = 1.95A
  • Low gate charge ( Typ. 9nC)
  • Low Crss ( Typ. 4pF)
  • 100% avalanche tested
  • Improved dv/dt capability
  • ESD improved capability
  • RoHS compliant
  • Applications
  • This product is general usage and suitable for many different applications.
  • LCD / LED / PDP TV
  • Lighting
  • Uninterruptible Power Supplies
  • AC-DC Power Supplies
  • Technical Documentation & Design Resources
    Availability and Samples
    FDPF5N50NZU
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: Power MOSFET, N-Channel, UniFETTM II, Ultra FRFETTM, 500 V, 3.9 A, 2.0 Ω, TO-220F
  • Package Type: TO-220-3 FullPak
  • Package Case Outline: 221AT
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 1000
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 500 
  • VGS Max (V): ±25 
  • VGS(th) Max (V):
  • ID Max (A): 3.9 
  • PD Max (W): 30 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ):
  • RDS(on) Max @ VGS = 10 V (mΩ): 2000 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC):
  • Ciss Typ (pF): 365 
  • Package Type: TO-220-3 FullPak 
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