FDS2672: N-Channel UltraFET Trench® MOSFET 200V, 3.9A, 70mΩ

Description: This single N-Channel MOSFET is produced using Fai...
  • This single N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced UItraFET Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
  • Features
  • Max rDS(on) = 70mΩ at VGS = 10V, ID = 3.9A
  • Max rDS(on) = 80mΩ at VGS = 6V, ID = 3.5A
  • Fast switching speed
  • High performance trench technology for extremely low rDS(on)
  • RoHS compliant
  • Applications
  • This product is general usage and suitable for many different applications.
  • DC-DC Conversion
  • Technical Documentation & Design Resources
    Availability and Samples
    FDS2672
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: N-Channel UltraFET Trench® MOSFET 200V, 3.9A, 70mΩ
  • Package Type: SOIC-8
  • Package Case Outline: 751EB
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 2500
  • Inventory

  • Market Leadtime (weeks):4 to 8
  • Arrow:0
  • Digikey:In Stock
  • Mouser:<100
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 200 
  • VGS Max (V): ±20 
  • VGS(th) Max (V):
  • ID Max (A): 3.9 
  • PD Max (W): 2.5 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ):
  • RDS(on) Max @ VGS = 10 V (mΩ): 70 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 33 
  • Ciss Typ (pF): 1905 
  • Package Type: SOIC-8 
  • ON Semiconductor Full Web Site