FDS4465: P-Channel 1.8V Specified PowerTrench® MOSFET -20V, -13.5A, 8.5mΩ

Description: This P-Channel 1.8V specified MOSFET is a rugged g...
  • This P-Channel 1.8V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (1.8V – 8V).
  • Features
  • -13.5 A, -20 V.
  • RDS(on) = 8.5mΩ @ VGS = - 4.5V
  • RDS(on) = 10.5mΩ @ VGS = - 2.5V
  • RDS(on) = 14mΩ @ VGS = - 1.8V
  • Fast switching speed
  • High performance trench technology for extremelylow RDS(ON)
  • High current and power handling capability
  • Applications
  • This product is general usage and suitable for many different applications.
  • Power Management
  • Load Switch
  • Battery Protection
  • Technical Documentation & Design Resources
    Availability and Samples
    FDS4465
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: P-Channel 1.8V Specified PowerTrench® MOSFET -20V, -13.5A, 8.5mΩ
  • Package Type: SOIC-8
  • Package Case Outline: 751EB
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 2500
  • Inventory

  • Market Leadtime (weeks):13 to 16
  • Arrow:0
  • Avnet:>50K
  • Digikey:>1K
  • Mouser:>10K
  • Newark:>1K
  • Specifications
  • Channel Polarity: P-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): -20 
  • VGS Max (V):
  • VGS(th) Max (V): -1.5 
  • ID Max (A): -13.5 
  • PD Max (W): 2.5 
  • RDS(on) Max @ VGS = 2.5 V (mΩ): 10.5 
  • RDS(on) Max @ VGS = 4.5 V (mΩ): 8.5 
  • RDS(on) Max @ VGS = 10 V (mΩ):
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 86 
  • Ciss Typ (pF): 8237 
  • Package Type: SOIC-8 
  • ON Semiconductor Full Web Site