FDS4675: 40V P-Channel PowerTrench® MOSFET -11A, 13mΩ

Description: This P-Channel MOSFET is a rugged gate version of ...
  • This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V - 20V).
  • Features
  • -11A, -40 V.
  • RDS(ON) = 0.013 Ω @ VGS = -10 V
  • RDS(ON) = 0.017 Ω @ VGS = -4.5 V
  • Fast switching speed
  • High performance trench technology for extremelylow RDS(ON)
  • High power and current handling capability
  • Applications
  • This product is general usage and suitable for many different applications.
  • Battery Protection
  • Load Switch
  • Power Management
  • Technical Documentation & Design Resources
    Availability and Samples
    FDS4675
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: 40V P-Channel PowerTrench® MOSFET -11A, 13mΩ
  • Package Type: SOIC-8
  • Package Case Outline: 751EB
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 2500
  • Inventory

  • Market Leadtime (weeks):17 to 20
  • Arrow:0
  • Digikey:<100
  • Specifications
  • Channel Polarity: P-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): -40 
  • VGS Max (V): ±20 
  • VGS(th) Max (V): -3 
  • ID Max (A): -11 
  • PD Max (W): 2.4 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ): 17 
  • RDS(on) Max @ VGS = 10 V (mΩ): 13 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 40 
  • Ciss Typ (pF): 4350 
  • Package Type: SOIC-8 
  • ON Semiconductor Full Web Site