FDS4897C: 40V Dual N & P-Channel PowerTrench® MOSFET

Description: These dual N- and P-Channel enhancement mode power...
  • These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
  • Features
  • Q1 N-Channel
    6.2A, 40V
    Max. RDS(on) = 29 mΩ at VGS = 10 V
    Max. RDS(on) = 36 mΩ at VGS = 4.5 V
  • Q2 P-Channel
    -4.4A, -40V
    Max. RDS(on) = 46 mΩ at VGS = -10 V
    Max. RDS(on) = 63 mΩ at VGS = -4.5 V
  • High power and handling capability in a widelyused surface mount package
  • RoHS compliant
  • Applications
  • This product is general usage and suitable for many different applications.
  • Inverter
  • Power Supplies
  • Technical Documentation & Design Resources
    Availability and Samples
    FDS4897C
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: 40V Dual N & P-Channel PowerTrench® MOSFET
  • Package Type: SOIC-8
  • Package Case Outline: 751EB
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 2500
  • Inventory

  • Market Leadtime (weeks):4 to 8
  • Arrow:0
  • Digikey:>1K
  • Newark:<1K
  • Specifications
  • Channel Polarity: Complementary 
  • Configuration: Dual 
  • V(BR)DSS Min (V): ±40 
  • VGS Max (V): ±20 
  • VGS(th) Max (V): ±3 
  • ID Max (A): N: 6.2, P: -4.4 
  • PD Max (W):
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ): N:36.0,P:63.0 
  • RDS(on) Max @ VGS = 10 V (mΩ): N:29.0,P:46.0 
  • Qg Typ @ VGS = 4.5 V (nC): 16 
  • Qg Typ @ VGS = 10 V (nC):
  • Ciss Typ (pF): N: 760, P: 1050 
  • Package Type: SOIC-8 
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