FDS4935BZ: Dual -30V P-Channel PowerTrench® MOSFET -6.9A 22mΩ

Description: This P-Channel MOSFET has been designed specifical...
  • This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers.
    These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.
    The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
  • Features
  • –6.9 A, –30 V
  • RDS(ON) = 22 mΩ @ VGS = –10 V
  • RDS(ON) = 35 m @ VGS = – 4.5 V
  • Extended VGSS range (–25V) for battery applications
  • ESD protection diode (note 3)
  • High performance trench technology for extremelylow RDS(ON)
  • High power and current handling capability
  • Applications
  • This product is general usage and suitable for many different applications.
  • Technical Documentation & Design Resources
    Availability and Samples
    FDS4935BZ
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: Dual -30V P-Channel PowerTrench® MOSFET -6.9A 22mΩ
  • Package Type: SOIC-8
  • Package Case Outline: 751EB
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 2500
  • Inventory

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  • Specifications
  • Channel Polarity: P-Channel 
  • Configuration: Dual 
  • V(BR)DSS Min (V): -30 
  • VGS Max (V): 25 
  • VGS(th) Max (V): -3 
  • ID Max (A): -6.9 
  • PD Max (W): 1.6 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ): Q1=Q2=35 
  • RDS(on) Max @ VGS = 10 V (mΩ): Q1=Q2=22 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 16 
  • Ciss Typ (pF): 1360 
  • Package Type: SOIC-8 
  • ON Semiconductor Full Web Site