FDS6375: P-Channel 2.5V Specified PowerTrench® MOSFFET -20V, -8A, 24mΩ

Description: This P-Channel 2.5V specified MOSFET is a rugged g...
  • This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 8V)
  • Features
  • -8.0 A, -20 V
  • RDS(on) = 24 mΩ @ VGS = -4.5 V
  • RDS(on) = 32 mΩ @ VGS = -2.5 V
  • Low gate charge (26nC typical)
  • Fast switching speed
  • High performance trench technology for extremely low RDS(ON)
  • High power and current handling capability
  • Applications
  • This product is general usage and suitable for many different applications.
  • Power Management
  • Load Switch
  • Battery Protection
  • Technical Documentation & Design Resources
    Availability and Samples
    FDS6375
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: P-Channel 2.5V Specified PowerTrench® MOSFFET -20V, -8A, 24mΩ
  • Package Type: SOIC-8
  • Package Case Outline: 751EB
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 2500
  • Inventory

  • Market Leadtime (weeks):Contact Factory
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  • Avnet:>50K
  • Digikey:>10K
  • Mouser:>1K
  • Newark:>1K
  • Newark:>1K
  • Newark:>1K
  • Specifications
  • Channel Polarity: P-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): -20 
  • VGS Max (V):
  • VGS(th) Max (V): -1.5 
  • ID Max (A): -8 
  • PD Max (W): 2.5 
  • RDS(on) Max @ VGS = 2.5 V (mΩ): 32 
  • RDS(on) Max @ VGS = 4.5 V (mΩ): 24 
  • RDS(on) Max @ VGS = 10 V (mΩ):
  • Qg Typ @ VGS = 4.5 V (nC): 75 
  • Qg Typ @ VGS = 10 V (nC): 26 
  • Ciss Typ (pF): 2694 
  • Package Type: SOIC-8 
  • ON Semiconductor Full Web Site