FDS6670AS: 30V N-Channel PowerTrench® SyncFET™ 13.5A, 9.0mΩ

Description: The FDS6670AS is designed to replace a single SO-8...
  • The FDS6670AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6670AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology.
  • Features
  • 13.5A, 30V
    RDS(on) = 9.0mΩ @ VGS = 10V
    RDS(on) = 11.5mΩ @ VGS = 4.5V
  • Includes SyncFET Schottky body diode
  • Low gate charge (27nC typical)
  • High performance trench technology for extremely lowRDS(ON) and fast switching
  • High power and current handling capability
  • RoHS Compliant
  • Applications
  • This product is general usage and suitable for many different applications.
  • DC/DC Converters
  • Low Side Notebook
  • Technical Documentation & Design Resources
    Availability and Samples
    FDS6670AS
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: 30V N-Channel PowerTrench® SyncFET™ 13.5A, 9.0mΩ
  • Package Type: SOIC-8
  • Package Case Outline: 751EB
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 2500
  • Inventory

  • Market Leadtime (weeks):Contact Factory
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  • Digikey:>1K
  • Newark:>1K
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 30 
  • VGS Max (V): 20 
  • VGS(th) Max (V):
  • ID Max (A): 13.5 
  • PD Max (W): 2.5 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ): 11.5 
  • RDS(on) Max @ VGS = 10 V (mΩ):
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 16 
  • Ciss Typ (pF): 1540 
  • Package Type: SOIC-8 
  • ON Semiconductor Full Web Site