FDS6680AS: 30V N-Channel PowerTrench® SyncFET™ 11.5A, 10.0mΩ

Description: The FDS6680AS is designed to replace a single SO-8...
  • The FDS6680AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6680AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDS6680AS as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDS6680 in parallel with a Schottky diode.
  • Features
  • 11.5A, 30V
  • RDS(ON) = 8.0 mΩ @ VGS = 10V
  • RDS(ON) = 10.5 mΩ @ VGS = 4.5V
  • Includes SyncFET Schottky body diode
  • Low gate charge (22nC typical)
  • High performance trench technology for extremely lowRDS(ON) and fast switching
  • High power and current handling capability
  • Applications
  • This product is general usage and suitable for many different applications.
  • DC/DC Converters
  • Low Side Notebook
  • Technical Documentation & Design Resources
    Availability and Samples
    FDS6680AS
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: 30V N-Channel PowerTrench® SyncFET™ 11.5A, 10.0mΩ
  • Package Type: SOIC-8
  • Package Case Outline: 751EB
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 2500
  • Inventory

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  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 30 
  • VGS Max (V): 20 
  • VGS(th) Max (V):
  • ID Max (A): 11.5 
  • PD Max (W): 2.5 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ): 12.5 
  • RDS(on) Max @ VGS = 10 V (mΩ): 10 
  • Qg Typ @ VGS = 4.5 V (nC): 33 
  • Qg Typ @ VGS = 10 V (nC): 12 
  • Ciss Typ (pF): 1240 
  • Package Type: SOIC-8 
  • ON Semiconductor Full Web Site