FDS6898AZ_F085: Dual N-Channel Logic Level PWM Optimized PowerTrench® MOSFET 20V, 9.4A, 10mΩ

Description: These N-Channel Logic Level MOSFETs are produced u...
  • These N-Channel Logic Level MOSFETs are produced using an advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
  • Features
  • 9.4 A, 20 V
    RDS(ON) = 14mΩ, @VGS = 4.5V
    RDS(ON) = 18mΩ, @VGS = 2.5V
  • Low gate charge (16 nC typical)
  • ESD protection diode (note 3)
  • High performance trench technology for extremelylow RDS(ON)
  • High power and current handling capability
  • Qualified to AEC Q101
  • RoHS compliant
  • Applications
  • Infotainment
  • Portable Navigation
  • Infotainment
  • Other
  • Power Train
  • Safety and Control
  • Comfort and Convenience
  • Body Electronics
  • Vehicle Security Systems
  • Other Automotive
  • Technical Documentation & Design Resources
    Availability and Samples
    FDS6898AZ-F085
  • Status: Active
  • Compliance: AEC Qualified PPAP Capable Pb-free Halide free 
  • Description: Dual N-Channel Logic Level PWM Optimized PowerTrench® MOSFET 20V, 9.4A, 10mΩ
  • Package Type: SOIC-8
  • Package Case Outline: 751EB
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 2500
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Dual 
  • V(BR)DSS Min (V): 20 
  • VGS Max (V): 12 
  • VGS(th) Max (V): 1.5 
  • ID Max (A): 9.4 
  • PD Max (W):
  • RDS(on) Max @ VGS = 2.5 V (mΩ): Q1=Q2=18 
  • RDS(on) Max @ VGS = 4.5 V (mΩ): Q1=Q2=14 
  • RDS(on) Max @ VGS = 10 V (mΩ):
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 16 
  • Ciss Typ (pF): 1821 
  • Package Type: SOIC-8 
  • ON Semiconductor Full Web Site