FDS8813NZ: N-Channel PowerTrench® MOSFET 30V, 18.5A, 4.5mΩ

Description: This N–Channel MOSFET is produced using Fair...
  • This N–Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench® process that has been especially tailored to minimize the on–state resistance.
    This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
  • Features
  • Max rDS(on) = 4.5 mΩ at VGS = 10 V, ID = 18.5 A
  • Max rDS(on) = 6.0 mΩ at VGS = 4.5 V, ID = 16 A
  • HBM ESD protection level of 5.6kV typical (note 3)
  • High performance trench technology for extremely low rDS(on)
  • High power and current handling capability
  • RoHS compliant
  • Applications
  • This product is general usage and suitable for many different applications.
  • Technical Documentation & Design Resources
    Availability and Samples
    FDS8813NZ
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: N-Channel PowerTrench® MOSFET 30V, 18.5A, 4.5mΩ
  • Package Type: SOIC-8
  • Package Case Outline: 751EB
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 2500
  • Inventory

  • Market Leadtime (weeks):Contact Factory
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  • Avnet:>1K
  • Digikey:>100K
  • Mouser:>1K
  • Newark:>1K
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 30 
  • VGS Max (V): 20 
  • VGS(th) Max (V):
  • ID Max (A): 18.5 
  • PD Max (W): 2.5 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ):
  • RDS(on) Max @ VGS = 10 V (mΩ): 4.5 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 28 
  • Ciss Typ (pF): 3115 
  • Package Type: SOIC-8 
  • ON Semiconductor Full Web Site