FDS8870: N-Channel PowerTrench® MOSFET 30V, 18A, 4.2mΩ

Description: This N-Channel MOSFET has been designed specifical...
  • This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
  • Features
  • rDS(ON) = 4.2 mΩ (Typ), VGS = 10 V, ID = 18 A
  • rDS(ON) = 4.9 mΩ (Typ), VGS = 4.5 V, ID = 17 A
  • High performance trench technology for extremely lowrDS(ON)
  • Low gate charge
  • High power and current handling capability
  • RoHS Compliant
  • Applications
  • This product is general usage and suitable for many different applications.
  • DC/DC Converters
  • Technical Documentation & Design Resources
    Availability and Samples
    FDS8870
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: N-Channel PowerTrench® MOSFET 30V, 18A, 4.2mΩ
  • Package Type: SOIC-8
  • Package Case Outline: 751EB
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 2500
  • Inventory

  • Market Leadtime (weeks):13 to 16
  • Arrow:0
  • Digikey:>1K
  • Mouser:>1K
  • Newark:<1K
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 30 
  • VGS Max (V): 20 
  • VGS(th) Max (V): 2.5 
  • ID Max (A): 18 
  • PD Max (W): 2.5 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ): 4.9 
  • RDS(on) Max @ VGS = 10 V (mΩ): 4.2 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 45 
  • Ciss Typ (pF): 4615 
  • Package Type: SOIC-8 
  • ON Semiconductor Full Web Site