FDS8880: N-Channel PowerTrench® MOSFET 30V, 11.6A, 10mΩ

Description: This N-Channel MOSFET has been designed specifical...
  • This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
  • Features
  • RDS(ON) = 10 mΩ @ VGS = 10V @ ID = 11.6A
  • RDS(ON) = 12mΩ @ VGS = 4.5V @ ID = 10.7A
  • High performance trench technology for extremely lowrDS(ON)
  • Low gate charge
  • High power and current handling capability
  • Applications
  • This product is general usage and suitable for many different applications.
  • Technical Documentation & Design Resources
    Availability and Samples
    FDS8880
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: N-Channel PowerTrench® MOSFET 30V, 11.6A, 10mΩ
  • Package Type: SOIC-8
  • Package Case Outline: 751EB
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 2500
  • Inventory

  • Market Leadtime (weeks):Contact Factory
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  • Mouser:>1K
  • Newark:>1K
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 30 
  • VGS Max (V): 20 
  • VGS(th) Max (V): 2.5 
  • ID Max (A): 11.6 
  • PD Max (W): 2.5 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ): 12 
  • RDS(on) Max @ VGS = 10 V (mΩ): 10 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 12 
  • Ciss Typ (pF): 1235 
  • Package Type: SOIC-8 
  • ON Semiconductor Full Web Site