FDS89161LZ: Dual N-Channel Shielded Gate PowerTrench® MOSFET 100V, 2.7A, 105mΩ

Description: This N-Channel logic Level MOSFETs are produced us...
  • This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resisitance and yet maintain superior switching performance. G-S zener has been added to enhance ESD voltage level.
  • Features
  • Shielded Gate MOSFET Technology
  • Max rDS(on) = 105 mΩat VGS = 10 V, ID = 2.7 A
  • Max rDS(on) = 160 mΩat VGS = 4.5 V, ID = 2.1 A
  • High performance trench technology for extremely low rDS(on)
  • High power and current handling capability in a widely used surface mount package
  • CDM ESD protection level > 2KV typical (Note 4)
  • 100% UIL Tested
  • RoHS Compliant
  • Applications
  • Consumer Appliances
  • DC-DC Conversion
  • Technical Documentation & Design Resources
    Availability and Samples
    FDS89161LZ
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: Dual N-Channel Shielded Gate PowerTrench® MOSFET 100V, 2.7A, 105mΩ
  • Package Type: SOIC-8
  • Package Case Outline: 751EB
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 2500
  • Inventory

  • Market Leadtime (weeks):Contact Factory
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  • Digikey:>1K
  • Mouser:>1K
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Dual 
  • V(BR)DSS Min (V): 100 
  • VGS Max (V): ±20 
  • VGS(th) Max (V): 2.2 
  • ID Max (A): 2.7 
  • PD Max (W):
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ): Q1:160.0, Q2: 160.0 
  • RDS(on) Max @ VGS = 10 V (mΩ): Q1:105.0, Q2: 105.0 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 2.1 
  • Ciss Typ (pF): 227 
  • Package Type: SOIC-8 
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