FDS9435A: 30V P-Channel PowerTrench® MOSFET -5.3A, 50mΩ

Description: This P-Channel MOSFET is a rugged gate version of ...
  • This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V).
  • Features
  • -5.3 A, -30 V
  • RDS(ON) = 50 mΩ @ VGS = -10 V
  • RDS(ON) = 80 mΩ @ VGS = - 4.5 V.
  • Low gate charge
  • Fast switching speed
  • High density cell design for extremely low RDS(ON).
  • High power and current handling capability
  • Applications
  • This product is general usage and suitable for many different applications.
  • Power Management
  • Load Switch
  • Battery Protection
  • Technical Documentation & Design Resources
    Availability and Samples
    FDS9435A
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: 30V P-Channel PowerTrench® MOSFET -5.3A, 50mΩ
  • Package Type: SOIC-8
  • Package Case Outline: 751EB
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 2500
  • Inventory

  • Market Leadtime (weeks):17 to 20
  • Arrow:0
  • Digikey:>10K
  • Mouser:>10K
  • Newark:>1K
  • FDS9435A-NBAD008
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: 30V P-Channel PowerTrench® MOSFET -5.3A, 50mΩ
  • Package Type: SOIC-8
  • Package Case Outline: 751EB
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 2500
  • Inventory

  • Market Leadtime (weeks):Contact Factory
  • Arrow:0
  • ON Semiconductor:12,500
  • Specifications
  • Channel Polarity: P-Channel 
  • Configuration: Single   
  • V(BR)DSS Min (V): -30 
  • VGS Max (V): 25 
  • VGS(th) Max (V): -3 
  • ID Max (A): -5.3 
  • PD Max (W): 2.5 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ): 80 
  • RDS(on) Max @ VGS = 10 V (mΩ): 50 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 10 
  • Ciss Typ (pF): 528 
  • Package Type: SOIC-8 
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