FDT439N: N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor 30V, 6.3A, 45mΩ

Description: This N-Channel Enhancement mode field effect trans...
  • This N-Channel Enhancement mode field effect transistor is produced using Fairchild Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, and provide superior switching performance. These products are well suited to low voltage, low current applications such as notebook computer power management, battery powered circuits, and DC motor control.
  • Features
  • 6.3 A, 30 V
    RDS(on) = 0.045 Ω @ VGS = 4.5 V
    RDS(on) = 0.058 Ω @ VGS = 2.5 V
  • Fast switching speed
  • High power and current handling capabitlity in a widely used surface mount package
  • Applications
  • This product is general usage and suitable for many different applications.
  • DC/DC Converters
  • Load Switch
  • Motor Drives
  • Technical Documentation & Design Resources
    Availability and Samples
    FDT439N
  • Status: Active
  • Compliance: Pb-free 
  • Description: N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor 30V, 6.3A, 45mΩ
  • Package Type: SOT-223-4 / TO-261-4
  • Package Case Outline: 318H-01
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 4000
  • Inventory

  • Market Leadtime (weeks):17 to 20
  • Arrow:0
  • Digikey:>10K
  • Mouser:<1K
  • Newark:>1K
  • Newark:>1K
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 30 
  • VGS Max (V):
  • VGS(th) Max (V):
  • ID Max (A): 6.3 
  • PD Max (W):
  • RDS(on) Max @ VGS = 2.5 V (mΩ): 58 
  • RDS(on) Max @ VGS = 4.5 V (mΩ): 45 
  • RDS(on) Max @ VGS = 10 V (mΩ):
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 10.7 
  • Ciss Typ (pF): 500 
  • Package Type: SOT-223-4 / TO-261-4 
  • ON Semiconductor Full Web Site