FDT459N: N-Channel Enhancement Mode Field Effect Transistor 30V, 6.5A, 35mΩ

Description: These N-Channel enhancement mode power field effec...
  • These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance. These products are well suited to low voltage, low current applications such as notebook computer power management, battery powered circuits, and DC motor control.
  • Features
  • 6.5A, 30V
    RDS(ON) = 0.035Ω @ VGS = 10V
    RDS(ON) = 0.055Ω @ VGS = 4.5V
  • High density cell design for extremely low RDS(ON)
  • High power and current handling capability in a widely used surface mount package
  • Applications
  • This product is general usage and suitable for many different applications.
  • Technical Documentation & Design Resources
    Availability and Samples
    FDT459N
  • Status: Active
  • Compliance: Pb-free 
  • Description: N-Channel Enhancement Mode Field Effect Transistor 30V, 6.5A, 35mΩ
  • Package Type: SOT-223-4 / TO-261-4
  • Package Case Outline: 318H-01
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 4000
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 30 
  • VGS Max (V): 20 
  • VGS(th) Max (V):
  • ID Max (A): 6.5 
  • PD Max (W):
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ): 55 
  • RDS(on) Max @ VGS = 10 V (mΩ): 35 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 12 
  • Ciss Typ (pF): 365 
  • Package Type: SOT-223-4 / TO-261-4 
  • ON Semiconductor Full Web Site