FDT86106LZ: N-Channel PowerTrench® MOSFET 100V, 3.2A, 108mΩ

Description: This N-Channel logic Level MOSFETs are produced us...
  • This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance. G-S zener has been added to enhance ESD voltage level.
  • Features
  • Max rDS(on) = 108 mΩ at VGS = 10 V, ID = 3.2 A
  • Max rDS(on) = 153 mΩ at VGS = 4.5 V, ID = 2.7 A
  • High performance trench technology for extremely low rDS(on)
  • High power and current handling capability in a widely usedsurface mount package
  • HBM ESD protection level > 3 KV typical (Note 4)
  • 100% UIL tested
  • RoHS Compliant
  • Applications
  • This product is general usage and suitable for many different applications.
  • DC-DC Conversion
  • Technical Documentation & Design Resources
    Availability and Samples
    FDT86106LZ
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: N-Channel PowerTrench® MOSFET 100V, 3.2A, 108mΩ
  • Package Type: SOT-223-4 / TO-261-4
  • Package Case Outline: 318H-01
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 4000
  • Inventory

  • Market Leadtime (weeks):Contact Factory
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  • Digikey:<1K
  • Mouser:<1K
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 100 
  • VGS Max (V): ±20 
  • VGS(th) Max (V): 2.2 
  • ID Max (A): 3.2 
  • PD Max (W): 2.2 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ): 153 
  • RDS(on) Max @ VGS = 10 V (mΩ): 108 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 2.4 
  • Ciss Typ (pF): 234 
  • Package Type: SOT-223-4 / TO-261-4 
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