FFD04H60S: 4A, 600V, Hyperfast II Diode

Description: The FFD04H60S is a hyperfast II diode and silicon ...
  • The FFD04H60S is a hyperfast II diode and silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as freewheeling/clamping diodes in a variety of switching power supplies and other power switching applications. Its low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.
  • Features
  • Hyperfast recovery, Trr = 60ns (@IF= 4A)
  • Max Forward Voltage, VF = 2.1V (@ TC = 25°C)
  • 600V Reverse Voltage and High Reliability
  • Avalanche Energy Rated
  • RoHS Compliant
  • Applications
  • Lighting
  • Technical Documentation & Design Resources
    Availability and Samples
    FFD04H60S
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: 4A, 600V, Hyperfast II Diode
  • Package Type: DPAK-3 / TO-252-3
  • Package Case Outline: 369AS
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 2500
  • Inventory

  • Market Leadtime (weeks):8 to 12
  • Arrow:0
  • Mouser:>1K
  • Specifications
  • Type: Single 
  • IO(rec) Max (A):
  • trr Max (ns): 60 
  • VRRM Max (V): 600 
  • VFM Max (V): 2.1 
  • IFSM Max (A): 40 
  • IR Max (mA): 0.1 
  • Package Type: DPAK-3 / TO-252-3 
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