FFP08S60SN: 8A, 600V, STEALTH™ II Diode

Description: The FFP08S60SN is a STEALTH™ II diode with soft re...
  • The FFP08S60SN is a STEALTH™ II diode with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as freewheeling of boost diode in switching power supplies and other power swithching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.
  • Features
  • Stealth recovery Trr = 25ns (@IF= 8A)
  • Max Forward Voltage, VF = 3.4V (@ TC = 25°C)
  • 600V Reverse Voltage and High Reliability
  • Improved dv/dt capability
  • RoHS compliant
  • Applications
  • LCD TV
  • Technical Documentation & Design Resources
    Availability and Samples
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: 8A, 600V, STEALTH™ II Diode
  • Package Type: TO-220-2
  • Package Case Outline: 340BA
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 1000
  • Inventory

  • Market Leadtime (weeks):2 to 4
  • Arrow:0
  • Digikey:<1K
  • Mouser:>1K
  • Specifications
  • Type: Single 
  • IO(rec) Max (A):  
  • trr Max (ns): 25 
  • VRRM Max (V): 600 
  • VFM Max (V):  
  • IFSM Max (A):  
  • IR Max (mA): 100 
  • Package Type: TO-220-2 
  • ON Semiconductor Full Web Site