FFPF08S60S: 8A, 600V, STEALTH™ II Diode

Description: The FFPF08S60S is STEALTH™ II diode with soft reco...
  • The FFPF08S60S is STEALTH™ II diode with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as freewheeling of boost diode in switching power supplies and other power swithching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.
  • Features
  • Stealth recovery Trr = 30ns (@IF= 8A)
  • Max Forward Voltage, VF = 2.6V (@ TC = 25°C)
  • 600V Reverse Voltage and High Reliability
  • Avalanche Energy Rated
  • RoHS compliant
  • Applications
  • AC-DC Merchant Power Supply - Desktop PC
  • Technical Documentation & Design Resources
    Availability and Samples
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: 8A, 600V, STEALTH™ II Diode
  • Package Type: TO-220 FP / TO-220F-2FS
  • Package Case Outline: 221AS
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 1000
  • Specifications
  • Type: Single 
  • IO(rec) Max (A):
  • trr Max (ns): 30 
  • VRRM Max (V): 600 
  • VFM Max (V): 2.6 
  • IFSM Max (A): 80 
  • IR Max (mA): 0.1 
  • Package Type: TO-220 FP / TO-220F-2FS 
  • ON Semiconductor Full Web Site