FFSB20120A-F085: Automotive Silicon Carbide (SiC) Schottky Diode, 1200V

Description: Silicon Carbide (SiC) Schottky Diodes use a comple...
  • Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
  • Features
  • Max Junction Temperature 175°C
  • Avalanche Rated 200 mJ
  • High Surge Current Capacity
  • Positive Temperature Coefficient
  • Ease of Paralleling
  • No Reverse Recovery/No Forward Recovery
  • AEC−Q101 qualified
  • Applications
  • Automotive HEV−EV Onboard Chargers
  • Automotive HEV−EV DC−DC Converters
  • Technical Documentation & Design Resources
    Availability and Samples
    FFSB20120A-F085
  • Status: Active
  • Compliance: AEC Qualified PPAP Capable Pb-free Halide free 
  • Description: Automotive Silicon Carbide (SiC) Schottky Diode, 1200V, Automotive Silicon Carbide (SiC) Schottky Diode, 1200V
  • Package Type: D2PAK-3 / TO-263-2
  • Package Case Outline: 418AJ
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 800
  • Specifications
  • Device Grade:  
  • Configuration: with Schottky Diode 
  • VRRM (V): 1200V 
  • IF(ave) (A): 20 
  • VF (Max): 1.75 
  • IFSM (A): 135 
  • IR (Max) (µA): 400 
  • Package Type: D2PAK-3 / TO-263-2 
  • ON Semiconductor Full Web Site