FFSH20120A: Silicon Carbide Schottky Diode

Description: Silicon Carbide (SiC) Schottky Diodes use a comple...
  • Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased powerdensity, reduced EMI, and reduced system size and cost.
  • Features
  • Max Junction Temperature 175 °C
  • Avalanche Rated 200 mJ
  • High Surge Current Capacity
  • Positive Temperature Coefficient
  • Ease of Paralleling
  • No Reverse Recovery / No Forward Recovery
  • Technical Documentation & Design Resources
    Availability and Samples
    FFSH20120A
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: Silicon Carbide Schottky Diode
  • Package Type: TO-247-2
  • Package Case Outline: 340CL
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 450
  • Inventory

  • Market Leadtime (weeks):Contact Factory
  • Arrow:0
  • Digikey:<1K
  • Mouser:<1K
  • ON Semiconductor:15,750
  • Specifications
  • Device Grade: Commercial 
  • Configuration: Single 
  • VRRM (V): 1200 
  • IF(ave) (A): 20 
  • VF (Max): 1.75 
  • IFSM (A): 135 
  • IR (Max) (µA): 200 
  • Package Type: TO-247-2 
  • ON Semiconductor Full Web Site