FFSH30120ADN: SiC Diode, 1200V, 30A, TO-247-3, Common Cathode

Description: Silicon Carbide (SiC) Schottky Diodes use a comple...
  • Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
  • Features
  • Max Junction Temperature 175 °C
  • Avalanche Rated 145 mJ
  • High Surge Current Capacity
  • Positive Temperature Coefficient
  • No Reverse Recovery / No Forward Recovery
  • Technical Documentation & Design Resources
    Availability and Samples
    FFSH30120ADN-F155
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: SiC Diode, 1200V, 30A, TO-247-3, Common Cathode
  • Package Type: TO-247-3
  • Package Case Outline: 340CH
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 450
  • Inventory

  • Market Leadtime (weeks):Contact Factory
  • Arrow:0
  • Mouser:<1K
  • Newark:<1K
  • Specifications
  • Device Grade: Commercial 
  • Configuration: Dual Common Cathode 
  • VRRM (V): 1200 
  • IF(ave) (A): 30 
  • VF (Max): 1.75 
  • IFSM (A): 140 
  • IR (Max) (µA): 200 
  • Package Type: TO-247-3 
  • ON Semiconductor Full Web Site