FGA40T65SHDF: 650 V, 40 A Field Stop Trench IGBT

Description: Using novel field stop IGBT technology, Fairchild’...
  • Using novel field stop IGBT technology, Fairchild’s new series of field stop 3rd generation IGBTs offer superior conduction and switching performance and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating and MWO.
  • Features
  • Maximum Junction Temperature : TJ = 175°C
  • Positive Temperature Co-efficient for Easy Parallel Operating
  • High Current Capability
  • Low Saturation Voltage: VCE(sat) = 1.45 V ( Typ.) @ IC = 40 A
  • 100% of the Parts tested for ILM(1)
  • High Input Impedance
  • Fast Switching
  • Tighten Parameter Distribution
  • RoHS Compliant
  • Technical Documentation & Design Resources
    Availability and Samples
    FGA40T65SHDF
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: 650 V, 40 A Field Stop Trench IGBT
  • Package Type: TO-3P-3LD / EIAJ SC-65, ISOLATED
  • Package Case Outline: 340BZ
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 450
  • Inventory

  • Market Leadtime (weeks):4 to 8
  • Arrow:0
  • Mouser:<1K
  • ON Semiconductor:38,700
  • Specifications
  • V(BR)CES Typ (V): 650 
  • IC Max (A): 40 
  • VCE(sat) Typ (V): 1.45 
  • VF Typ (V):  
  • Eoff Typ (mJ):  
  • Eon Typ (mJ):  
  • Trr Typ (ns): 238 
  • Irr Typ (A):  
  • Gate Charge Typ (nC):  
  • Short Circuit Withstand (µs):  
  • EAS Typ (mJ):  
  • PD Max (W):  
  • Co-Packaged Diode: Yes 
  • Package Type: TO-3P-3LD / EIAJ SC-65, ISOLATED 
  • ON Semiconductor Full Web Site