FGA5065ADF: 650 V, 50 A Field Stop Trench IGBT

Description: This ADF IGBT series adopted field stop trench 3rd...
  • This ADF IGBT series adopted field stop trench 3rd generation IGBT which offer extreme low VCE(sat) and much faster switching characteristics for outstanding efficiency. And this kind of technology is fully optimized to variety PFC (Power Factor Correction) topology; Single Boost, Multi Channel Interleaved etc with over 20KHz switching performance. TO3P package provide super low thermal resistance for much wider SOA for system stability.
  • Features
  • Maximum Junction Temperature : TJ = 175°C
  • Positive Temperaure Co-efficient for Easy Parallel Operating
  • High Current Capability
  • Low Saturation Voltage: VCE(sat) = 1.7 V(Typ.) @ IC = 50 A
  • 100% of the Parts Tested for ILM(1)
  • High Input Impedance
  • Fast Switching
  • Tighten Parameter Distribution
  • RoHS Compliant
  • Technical Documentation & Design Resources
    Availability and Samples
    FGA5065ADF
  • Status: Active
  • Compliance: Pb-free 
  • Description: 650 V, 50 A Field Stop Trench IGBT
  • Package Type: TO-3P-3LD / EIAJ SC-65, ISOLATED
  • Package Case Outline: 340BZ
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 450
  • Specifications
  • V(BR)CES Typ (V): 650 
  • IC Max (A): 50 
  • VCE(sat) Typ (V): 1.7 
  • VF Typ (V):  
  • Eoff Typ (mJ):  
  • Eon Typ (mJ):  
  • Trr Typ (ns): 192 
  • Irr Typ (A):  
  • Gate Charge Typ (nC):  
  • Short Circuit Withstand (µs):  
  • EAS Typ (mJ):  
  • PD Max (W):  
  • Co-Packaged Diode: Yes 
  • Package Type: TO-3P-3LD / EIAJ SC-65, ISOLATED 
  • ON Semiconductor Full Web Site