FGAF40S65AQ: 650 V, 40 A Field Stop Trench IGBT

Description: Using novel field stop IGBT technology, ON semicon...
  • Using novel field stop IGBT technology, ON semiconductor’s new series of field stop 4th generation of RC IGBTs offer the optimum performance for converter PFC stage of consummer and industrial applications
  • Features
  • Maximum junction temperature : TJ = 175°C
  • Positive temperaure co-efficient for easy parallel operating
  • High current capability
  • Low saturation voltage: VCE(sat) = 1.6V(Typ.) @ IC = 40A
  • High input impedance
  • 100% of the Parts tested for ILM
  • Fast switching
  • Tightened parameter distribution
  • RoHS compliant
  • IGBT with monolithic reverse conducting diode
  • Applications
  • Consumer Appliances
  • PFC, Welder
  • Industrial application
  • Technical Documentation & Design Resources
    Availability and Samples
    FGAF40S65AQ
  • Status: Active
  • Compliance: Pb-free 
  • Description: 650 V, 40 A Field Stop Trench IGBT, 650 V, 40 A Field Stop Trench IGBT
  • Package Type: TO-3PF-3L
  • Package Case Outline: 340AH
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 360
  • Specifications
  • V(BR)CES Typ (V): 650 
  • IC Max (A): 40 
  • VCE(sat) Typ (V): 1.6 
  • VF Typ (V): 1.2V 
  • Eoff Typ (mJ): 0.062 
  • Eon Typ (mJ): 0.132 
  • Trr Typ (ns): 274 
  • Irr Typ (A):
  • Gate Charge Typ (nC): 75 
  • Short Circuit Withstand (µs):
  • EAS Typ (mJ):
  • PD Max (W): 94 
  • Co-Packaged Diode: No 
  • Package Type: TO-3PF-3L 
  • ON Semiconductor Full Web Site