FGD3N60LSD: 600V, 3A, 1.2V, DPAK
Planar IGBT

Description: Fairchild's Insulated Gate Bipolar Transistors (IG...
  • Fairchild's Insulated Gate Bipolar Transistors (IGBTs) provide very low conduction losses. The device is designed for applications where very low On-Voltage Drop is a required feature.
  • Features
  • High Current Capability
  • Very Low Saturation Voltage : VCE(sat) = 1.2 V at IC = 3 A
  • High Input Impedance
  • Technical Documentation & Design Resources
    Availability and Samples
    FGD3N60LSDTM
  • Status: Active
  • Compliance: AEC Qualified PPAP Capable Pb-free Halide free 
  • Description: 600V, 3A, 1.2V, DPAK
    Planar IGBT
  • Package Type: DPAK-3 / TO-252-3
  • Package Case Outline: 369AS
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 2500
  • Inventory

  • Market Leadtime (weeks):4 to 8
  • Arrow:0
  • Digikey:>1K
  • Mouser:>1K
  • ON Semiconductor:442,500
  • FGD3N60LSDTM-T
  • Status: Active
  • Compliance: AEC Qualified PPAP Capable Pb-free Halide free 
  • Description: 600V, 3A, 1.2V, DPAK
    Planar IGBT
  • Package Type: DPAK-3 / TO-252-3
  • Package Case Outline: 369AS
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 2500
  • Inventory

  • Market Leadtime (weeks):4 to 8
  • Arrow:0
  • ON Semiconductor:672,500
  • Specifications
  • V(BR)CES Typ (V): 600 
  • IC Max (A):  
  • VCE(sat) Typ (V): 1.2   
  • VF Typ (V):  
  • Eoff Typ (mJ):  
  • Eon Typ (mJ):  
  • Trr Typ (ns):  
  • Irr Typ (A):  
  • Gate Charge Typ (nC):  
  • Short Circuit Withstand (µs):  
  • EAS Typ (mJ):  
  • PD Max (W):  
  • Co-Packaged Diode: Yes   
  • Package Type: DPAK-3 / TO-252-3 
  • ON Semiconductor Full Web Site