FGH40T120SQDNL4: IGBT, Ultra Field Stop

Description: This Insulated Gate Bipolar Transistor (IGBT) feat...
  • This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.
  • Features
  • Extremely Efficient Trench with Field Stop Technology • TJmax = 175°C • Soft Fast Reverse Recovery Diode • Optimized for High Speed Switching • These are Pb−Free Devices
  • Applications
  • Solar inverter UPS Welding
  • Technical Documentation & Design Resources
    Availability and Samples
    FGH40T120SQDNL4
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: IGBT, Ultra Field Stop
  • Package Type: TO-247-4
  • Package Case Outline: 340CJ
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 450
  • Inventory

  • Market Leadtime (weeks):17 to 20
  • Arrow:0
  • Digikey:<1K
  • Newark:<1K
  • Specifications
  • V(BR)CES Typ (V): 1200 
  • IC Max (A): 40 
  • VCE(sat) Typ (V): 1.78 
  • VF Typ (V): 3.4 
  • Eoff Typ (mJ): 1.1 
  • Eon Typ (mJ): 2.7 
  • Trr Typ (ns): 166 
  • Irr Typ (A):
  • Gate Charge Typ (nC): 221 
  • Short Circuit Withstand (µs):
  • EAS Typ (mJ):  
  • PD Max (W): 227 
  • Co-Packaged Diode: Yes 
  • Package Type: TO-247-4 
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