FGH40T65SP_F085: 650V, 40A Field Stop Trench IGBT

Description: Using the novel field stop 3rd generation IGBT tec...
  • Using the novel field stop 3rd generation IGBT technology, FGH40T65SPD_F085 offers the optimum performance with both low conduction loss and switching loss for a high efficiency operation in various applications, while provides 50V higher blocking voltage and rugged high current switching reliability. Meanwhile, this part also offers and advantage of outstanding performance in parallel operation.
  • Features
  • AEC-Q101 Qualified
  • Low Saturation Voltage : VCE(sat) = 1.85 V(Typ.) @ IC = 40 A
  • 100% of the parts are dynamically tested (Note 1)
  • Short Circuit Ruggedness > 5 μs @ 25 oC
  • Maximum Junction Temperature : TJ = 175 oC
  • Fast Switching
  • Tight Parameter Distribution
  • Positive Temperature Co-efficient for Easy Parallel Operating
  • Copacked with soft, fast recovery diode
  • RoHS Compliant
  • Technical Documentation & Design Resources
    Availability and Samples
    FGH40T65SPD-F085
  • Status: Active
  • Compliance: AEC Qualified PPAP Capable Pb-free 
  • Description: 650V, 40A Field Stop Trench IGBT
  • Package Type: TO-247-3
  • Package Case Outline: 340CK
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 450
  • Specifications
  • V(BR)CES Typ (V): 650 
  • IC Max (A):  
  • VCE(sat) Typ (V):  
  • VF Typ (V):  
  • Eoff Typ (mJ):  
  • Eon Typ (mJ):  
  • Trr Typ (ns):  
  • Irr Typ (A):  
  • Gate Charge Typ (nC):  
  • Short Circuit Withstand (µs):  
  • EAS Typ (mJ):  
  • PD Max (W):  
  • Co-Packaged Diode:  
  • Package Type: TO-247-3 
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