FGH40T65UQDF: 650 V, 40 A Field Stop Trench IGBT

Description: Using novel field stop IGBT technology, ON semicon...
  • Using novel field stop IGBT technology, ON semiconductor’s new series of field stop 4th generation IGBTs offer superior con-duction and switching performance and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating and MWO.
  • Features
  • Maximum Junction Temperature: TJ = 175°C
  • Positive Temperature Co-efficient for Easy Parallel Operating
  • High Current Capability
  • Low Saturation Voltage: VCE(sat) = 1.33 V ( Typ.) @ IC = 40 A
  • 100% of the Parts tested for ILM(1)
  • High Input Impedance
  • Fast Switching
  • Tighten Parameter Distribution
  • RoHS Compliant
  • Technical Documentation & Design Resources
    Availability and Samples
    FGH40T65UQDF-F155
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: 650 V, 40 A Field Stop Trench IGBT
  • Package Type: TO-247-3
  • Package Case Outline: 340CH
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 450
  • Specifications
  • V(BR)CES Typ (V): 650 
  • IC Max (A):  
  • VCE(sat) Typ (V):  
  • VF Typ (V):  
  • Eoff Typ (mJ):  
  • Eon Typ (mJ):  
  • Trr Typ (ns):  
  • Irr Typ (A):  
  • Gate Charge Typ (nC):  
  • Short Circuit Withstand (µs):  
  • EAS Typ (mJ):  
  • PD Max (W):  
  • Co-Packaged Diode:  
  • Package Type: TO-247-3 
  • ON Semiconductor Full Web Site