FGH75T65SQDTL4: 650 V, 75 A Field Stop Trench IGBT

Description: Using novel field stop IGBT technology, ON semicon...
  • Using novel field stop IGBT technology, ON semiconductor’s new series of field stop 4th generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential
  • Features
  • Maximum Junction Temperature: TJ = 175°C
  • Positive Temperature Co-efficient for Easy Parallel Operating
  • High Current Capability
  • Low Saturation Voltage: VCE(sat) = 1.6 V (Typ.) @ IC = 75 A
  • 100% of the Parts tested for ILM(1)
  • High Input Impedance
  • Fast Switching
  • Tighten Parameter Distribution
  • RoHS Compliant
  • Technical Documentation & Design Resources
    Availability and Samples
    FGH75T65SQDTL4
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: 650 V, 75 A Field Stop Trench IGBT
  • Package Type: TO-247-4
  • Package Case Outline: 340CJ
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 450
  • Inventory

  • Market Leadtime (weeks):Contact Factory
  • Arrow:0
  • Mouser:<1K
  • Specifications
  • V(BR)CES Typ (V): 650 
  • IC Max (A): 75 
  • VCE(sat) Typ (V): 1.6 
  • VF Typ (V):  
  • Eoff Typ (mJ):  
  • Eon Typ (mJ):  
  • Trr Typ (ns):  
  • Irr Typ (A):  
  • Gate Charge Typ (nC):  
  • Short Circuit Withstand (µs):  
  • EAS Typ (mJ):  
  • PD Max (W):  
  • Co-Packaged Diode: Yes 
  • Package Type: TO-247-4 
  • ON Semiconductor Full Web Site