FGY100T65SCDT: Field Stop Trench IGBT, Short Circuit Rated IGBT, 650 V, 100 A

Description: Using novel field stop IGBT technology, ON Semicon...
  • Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 3rd generation IGBTs offer the optimum performance for solar, UPS, motor control, ESS and HVAC applications where low conduction and switching losses are essential.
  • Features
  • Maximum Junction Temperature: TJ = 175°C
  • Positive Temperature Co-efficient for Easy Parallel Operating
  • High Current Capability
  • Low Saturation Voltage: VCE(sat) = 1.5 V (Typ.) @ IC = 100 A
  • High Input Impedance
  • Fast Switching
  • Short Circuit Rated 5 us
  • Tighten Parameter Distribution
  • These Devices are Pb−Free and are RoHS Compliant
  • Applications
  • Solar
  • UPS
  • Motor Control
  • ESS
  • HVAC
  • Technical Documentation & Design Resources
    Availability and Samples
    FGY100T65SCDT
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: Field Stop Trench IGBT, Short Circuit Rated IGBT, 650 V, 100 A
  • Package Type: TO-247-3
  • Package Case Outline: 340CD
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 450
  • Specifications
  • V(BR)CES Typ (V): 650 
  • IC Max (A): 100 
  • VCE(sat) Typ (V): 1.5 
  • VF Typ (V): 1.68 
  • Eoff Typ (mJ): 5.2 
  • Eon Typ (mJ): 9.7 
  • Trr Typ (ns): 62 
  • Irr Typ (A):
  • Gate Charge Typ (nC): 157 
  • Short Circuit Withstand (µs):
  • EAS Typ (mJ):
  • PD Max (W): 750 
  • Co-Packaged Diode: Yes 
  • Package Type: TO-247-3 
  • ON Semiconductor Full Web Site