FPF2C110BI07AS2: Power Integrated Module, F2, SiC Diode + MOSFET + IGBT, 650V

Description: Fairchild's Boost and H-Bridge module is designed ...
  • Fairchild's Boost and H-Bridge module is designed for a power stage that needs more compact design. And the Press-fit technology provides simple and reliable mounting. This module is optimized for the application such as solar inverter where a high efficiency and robust design are needed.
  • Features
  • Boost Stage- Dual Boost Topology- SiC Boost Diode- Low RDS(ON) Boost Switch- Low VF and High Voltage Bypass Diode
  • Inverter Stage- H-bridge Topology- High Speed IGBT and Fast Recovery FWD
  • Integrated DC-capacitor for Boost and Inverter
  • Temperature Sensor
  • Compact size : F2 Package
  • Press-fit Contact Technology
  • Al2O3 Substrate with Low Thermal Resistance
  • Technical Documentation & Design Resources
    Availability and Samples
    FPF2C110BI07AS2
  • Status: Active
  • Compliance: Pb-free 
  • Description: Power Integrated Module, F2, SiC Diode + MOSFET + IGBT, 650V
  • Package Type: HF2EA-P30 / 30LD, HPM, F2 PKG, PRESSFIT TERMINAL, TL 3KW PV MODULE
  • Package Case Outline: MODCU
  • MSL: NA
  • Container Type: JTRAY
  • Container Qty: 70
  • Specifications
  • Configuration: Dual MOSFET/SiC Boost with IGBT H-Bridge 
  • IC Max (A): 19 
  • V(BR) Max (V): 650 
  • VCE(sat) Typ (V): 1.6 
  • VF Typ (V): 2.45 
  • Package Type: HF2EA-P30 / 30LD, HPM, F2 PKG, PRESSFIT TERMINAL, TL 3KW PV MODULE 
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