FQA19N60: Power MOSFET, N-Channel, QFET®, 600 V, 18.5 A, 380 mΩ, TO-3P

Description: This N-Channel enhancement mode power MOSFET is pr...
  • This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
  • Features
  • 18.5A, 600V
    RDS(on) = 380mΩ(Max.) @VGS = 10 V, ID = 9.3A
  • Low gate charge ( Typ. 70nC)
  • Low Crss ( Typ. 35pF)
  • 100% avalanche tested
  • Applications
  • Desktop PC
  • AC-DC Merchant Power Supply - Desktop PC
  • Switched Mode Power Supplies
  • Active Power Factor Correction (PFC)
  • Electronic Lamp Ballasts
  • Technical Documentation & Design Resources
    Availability and Samples
    FQA19N60
  • Status: Active
  • Compliance: Pb-free 
  • Description: Power MOSFET, N-Channel, QFET®, 600 V, 18.5 A, 380 mΩ, TO-3P
  • Package Type: TO-3P-3L
  • Package Case Outline: 340BZ
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 450
  • Inventory

  • Market Leadtime (weeks):8 to 12
  • Arrow:0
  • Avnet:<1K
  • Digikey:<1K
  • Mouser:<1K
  • Newark:<1K
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 600 
  • VGS Max (V): ±30 
  • VGS(th) Max (V):
  • ID Max (A): 18.5 
  • PD Max (W): 300 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ):
  • RDS(on) Max @ VGS = 10 V (mΩ): 380 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 70 
  • Ciss Typ (pF): 2800 
  • Package Type: TO-3P-3L 
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