FQB19N20: Power MOSFET, N-Channel, QFET®, 200 V, 19.4 A, 150 mΩ, D2PAK

Description: This N-Channel enhancement mode power MOSFET is pr...
  • This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts..
  • Features
  • 19.4A, 200V, RDS(on) = 150mΩ(Max.) @VGS = 10 V, ID = 9.7A
  • Low gate charge ( Typ. 31nC)
  • Low Crss ( Typ. 30pF)
  • 100% avalanche tested
  • RoHS compliant
  • Applications
  • Other Industrial
  • Technical Documentation & Design Resources
    Availability and Samples
    FQB19N20TM
  • Status: Active
  • Compliance: Pb-free 
  • Description: Power MOSFET, N-Channel, QFET®, 200 V, 19.4 A, 150 mΩ, D2PAK
  • Package Type: D2PAK-3 / TO-263-2
  • Package Case Outline: 418AJ
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 800
  • Inventory

  • Market Leadtime (weeks):2 to 4
  • Arrow:0
  • Mouser:>1K
  • Newark:<1K
  • ON Semiconductor:12,800
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 200 
  • VGS Max (V): ±30 
  • VGS(th) Max (V):
  • ID Max (A): 19.4 
  • PD Max (W): 140 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ):
  • RDS(on) Max @ VGS = 10 V (mΩ): 150 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 31 
  • Ciss Typ (pF): 1220 
  • Package Type: D2PAK-3 / TO-263-2 
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