FQD18N20V2: Power MOSFET, N-Channel, QFET®, 200 V, 15 A, 140 mΩ, DPAK

Description: This N-Channel enhancement mode power MOSFET is pr...
  • This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
  • Features
  • 15A, 200V, RDS(on) = 140mΩ(Max.) @VGS = 10 V, ID = 7.5A
  • Low gate charge ( Typ. 20nC)
  • Low Crss ( Typ. 25pF)
  • 100% avalanche testedcapability
  • Applications
  • LCD TV
  • PDP TV
  • LED TV
  • Technical Documentation & Design Resources
    Availability and Samples
    FQD18N20V2TM
  • Status: Active
  • Compliance: Pb-free 
  • Description: Power MOSFET, N-Channel, QFET®, 200 V, 15 A, 140 mΩ, DPAK
  • Package Type: DPAK-3 / TO-252-3
  • Package Case Outline: 369AS
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 2500
  • Inventory

  • Market Leadtime (weeks):17 to 20
  • Arrow:0
  • Avnet:>100K
  • Digikey:>1K
  • Mouser:>1K
  • Newark:>1K
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 200 
  • VGS Max (V): ±30 
  • VGS(th) Max (V):
  • ID Max (A): 15 
  • PD Max (W): 83 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ):
  • RDS(on) Max @ VGS = 10 V (mΩ): 140 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 20 
  • Ciss Typ (pF): 830 
  • Package Type: DPAK-3 / TO-252-3 
  • ON Semiconductor Full Web Site