FQP12P10: Power MOSFET, P-Channel, QFET®, -100 V, -11.5 A, 290 mΩ, TO-220

Description: These P-Channel enhancement mode power field effec...
  • These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for lowvoltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
  • Features
  • -11.5 A, -100 V, RDS(on) = 290 mΩ (Max.) @ VGS = -10 V, ID = -5.75 A
  • Low Gate Charge (Typ. 21 nC)
  • Low Crss (Typ. 65 pF)
  • 100% Avalanche Tested
  • 175ºC Maximum Junction Temperature Rating
  • Applications
  • Audio Amplifiers
  • DC/DC Converters
  • DC Motor Control
  • Technical Documentation & Design Resources
    Availability and Samples
    FQP12P10
  • Status: Active
  • Compliance: Pb-free 
  • Description: Power MOSFET, P-Channel, QFET®, -100 V, -11.5 A, 290 mΩ, TO-220
  • Package Type: TO-220-3
  • Package Case Outline: 340AT
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 1000
  • Inventory

  • Market Leadtime (weeks):Contact Factory
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  • Mouser:<1K
  • Specifications
  • Channel Polarity: P-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): -100 
  • VGS Max (V): -4 
  • VGS(th) Max (V): -4 
  • ID Max (A): -11.5 
  • PD Max (W): 75 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ):
  • RDS(on) Max @ VGS = 10 V (mΩ): 290 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 21 
  • Ciss Typ (pF): 620 
  • Package Type: TO-220-3 
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