FQT2P25: P-Channel QFET® MOSFET -250 V, -0.55 A, 4.0 Ω

Description: These P-Channel enhancement mode power field effec...
  • These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for highefficiency switching DC/DC converters.
  • Features
  • -0.55 A, -250 V, RDS(on) = 4.0 Ω (Max.) @ VGS = -10 V, ID = -0.275 A
  • Low Gate Charge (Typ. 6.5 nC)
  • Low Crss (Typ. 6.5 pF)
  • 100% Avalanche Tested
  • Applications
  • High Efficiency Switching DC/DC Converters
  • Technical Documentation & Design Resources
    Availability and Samples
    FQT2P25TF
  • Status: Active
  • Compliance: Pb-free 
  • Description: P-Channel QFET® MOSFET -250 V, -0.55 A, 4.0 Ω
  • Package Type: SOT-223-4 / TO-261-4
  • Package Case Outline: 318H-01
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 4000
  • Inventory

  • Market Leadtime (weeks):4 to 8
  • Arrow:0
  • Digikey:>1K
  • Mouser:>1K
  • ON Semiconductor:52,000
  • Specifications
  • Channel Polarity: P-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): -250 
  • VGS Max (V): -5 
  • VGS(th) Max (V): -5 
  • ID Max (A): -0.55 
  • PD Max (W): 2.5 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ):
  • RDS(on) Max @ VGS = 10 V (mΩ): 4000 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 6.5 
  • Ciss Typ (pF): 190 
  • Package Type: SOT-223-4 / TO-261-4 
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