FQU13N10L: Power MOSFET, N-Channel, Logic Level, QFET®, 100 V, 10 A, 180 mΩ, IPAK

Description: This N-Channel enhancement mode power MOSFET is pr...
  • This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
  • Features
  • 10A, 100V, RDS(on) = 180mΩ(Max.) @VGS = 10 V, ID = 5A
  • Low Gate Charge ( Typ. 9.5nC)
  • Low Crss ( Typ. 35pF)
  • 100% Avalanche Tested
  • Low Level Gate Drive Requirement Allowing Direct Operation From Logic Drivers
  • Applications
  • LED TV
  • Technical Documentation & Design Resources
    Availability and Samples
    FQU13N10LTU
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: Power MOSFET, N-Channel, Logic Level, QFET®, 100 V, 10 A, 180 mΩ, IPAK
  • Package Type: IPAK-3 / DPAK-3 STRAIGHT LEAD
  • Package Case Outline: 369AR
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 5040
  • Inventory

  • Market Leadtime (weeks):2 to 4
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  • Newark:>1K
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 100 
  • VGS Max (V): ±20 
  • VGS(th) Max (V):
  • ID Max (A): 10 
  • PD Max (W): 40 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ): 200 
  • RDS(on) Max @ VGS = 10 V (mΩ): 180 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 8.7 
  • Ciss Typ (pF): 400 
  • Package Type: IPAK-3 / DPAK-3 STRAIGHT LEAD 
  • ON Semiconductor Full Web Site