HGT1S10N120BNS: 1200V, NPT IGBT

Description: HGT1S10N120BNST is based on Non- Punch Through(NPT...
  • HGT1S10N120BNST is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS, solar inverter, motor control and power supplies.
  • Features
  • 17A, 1200V, TC = 110°C
  • Low Saturation Voltage : V CE(sat) = 2.45 V @ I C = 10A
  • Typical Fall Time. . . . . . . . . .140ns at TJ = 150°C
  • Short Circuit Rating
  • Low Conduction Loss
  • Applications
  • Uninterruptible Power Supply
  • Technical Documentation & Design Resources
    Availability and Samples
    HGT1S10N120BNS
  • Status: Active, Not Rec
  • Compliance: Pb-free 
  • Description: 1200V, NPT IGBT
  • Package Type: D2PAK-3 / TO-263-2
  • Package Case Outline: 418AJ
  • MSL: 1
  • Container Type: TUBE
  • Container Qty: 800
  • Inventory

  • Market Leadtime (weeks):4 to 8
  • Arrow:0
  • ON Semiconductor:2,400
  • HGT1S10N120BNST
  • Status: Active
  • Compliance: Pb-free 
  • Description: 1200V, NPT IGBT
  • Package Type: D2PAK-3 / TO-263-2
  • Package Case Outline: 418AJ
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 800
  • Inventory

  • Market Leadtime (weeks):Contact Factory
  • Arrow:0
  • Digikey:<100
  • Specifications
  • V(BR)CES Typ (V): 1200 
  • IC Max (A): 17 
  • VCE(sat) Typ (V): 2.45 
  • VF Typ (V):  
  • Eoff Typ (mJ):  
  • Eon Typ (mJ):  
  • Trr Typ (ns):  
  • Irr Typ (A):  
  • Gate Charge Typ (nC):  
  • Short Circuit Withstand (µs):  
  • EAS Typ (mJ):  
  • PD Max (W):  
  • Co-Packaged Diode: No 
  • Package Type: D2PAK-3 / TO-263-2 
  • ON Semiconductor Full Web Site