HGTD1N120BNS: 1200V, NPT IGBT

Description: HGTD1N120BNS9A is based on Non- Punch Through(NPT)...
  • HGTD1N120BNS9A is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS, solar inverter, motor control and power supplies.
  • Features
  • 2.7A, 1200V at TC = 110°C
  • Low saturation voltage: VCE(sat) = 2.5V @ IC = 1.0A
  • Typical Fall Time...................258ns at TJ = 150°C
  • Short Circuit Rating
  • Low Conduction Loss
  • Applications
  • Uninterruptible Power Supply
  • Technical Documentation & Design Resources
    Availability and Samples
    HGTD1N120BNS9A
  • Status: Active
  • Compliance: Pb-free 
  • Description: 1200V, NPT IGBT
  • Package Type: DPAK-3 / TO-252-3
  • Package Case Outline: 369AS
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 2500
  • Inventory

  • Market Leadtime (weeks):17 to 20
  • Arrow:0
  • Digikey:<1K
  • Mouser:>1K
  • Specifications
  • V(BR)CES Typ (V): 1200 
  • IC Max (A): 2.7 
  • VCE(sat) Typ (V): 2.5 
  • VF Typ (V):  
  • Eoff Typ (mJ):  
  • Eon Typ (mJ):  
  • Trr Typ (ns):  
  • Irr Typ (A):  
  • Gate Charge Typ (nC):  
  • Short Circuit Withstand (µs):  
  • EAS Typ (mJ):  
  • PD Max (W):  
  • Co-Packaged Diode: No 
  • Package Type: DPAK-3 / TO-252-3 
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