Description: The HGTG20N60A4 combines the best features of high...
  • The HGTG20N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS, welder and induction heating.
  • Features
  • Other Industrial
  • Technical Documentation & Design Resources
    Availability and Samples
  • Status: Active
  • Compliance: Pb-free 
  • Description: 600V, SMPS IGBT
  • Package Type: TO-247-3
  • Package Case Outline: 340CK
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 450
  • Specifications
  • V(BR)CES Typ (V): 600 
  • IC Max (A): 40 
  • VCE(sat) Typ (V): 1.8 
  • VF Typ (V):
  • Eoff Typ (mJ): 0.15 
  • Eon Typ (mJ): 0.28 
  • Trr Typ (ns):
  • Irr Typ (A):
  • Gate Charge Typ (nC): 142 
  • Short Circuit Withstand (µs):
  • EAS Typ (mJ):
  • PD Max (W): 290 
  • Co-Packaged Diode: No 
  • Package Type: TO-247-3 
  • ON Semiconductor Full Web Site