HGTG30N60B3: 600V, PT IGBT

Description: The HGTG30N60B3 combines the best features of high...
  • The HGTG30N60B3 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS, solar inverter and power supplies.
  • Features
  • 30A, 600V, TC= 110°C
  • Low saturation voltage: VCE(sat) = 1.45V @ IC = 30A
  • Typical Fall Time. . . . . . . . 90ns at TJ= 150°C
  • Short Circuit Rating
  • Low Conduction Loss
  • Applications
  • Energy Generation & Distribution
  • Technical Documentation & Design Resources
    Availability and Samples
    HGTG30N60B3
  • Status: Active
  • Compliance: Pb-free 
  • Description: 600V, PT IGBT
  • Package Type: TO-247-3
  • Package Case Outline: 340CK
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 450
  • Inventory

  • Market Leadtime (weeks):4 to 8
  • Arrow:0
  • Avnet:>1K
  • Mouser:<100
  • Specifications
  • V(BR)CES Typ (V): 600 
  • IC Max (A): 30 
  • VCE(sat) Typ (V): 1.45 
  • VF Typ (V):  
  • Eoff Typ (mJ):  
  • Eon Typ (mJ):  
  • Trr Typ (ns):  
  • Irr Typ (A):  
  • Gate Charge Typ (nC):  
  • Short Circuit Withstand (µs):  
  • EAS Typ (mJ):  
  • PD Max (W):  
  • Co-Packaged Diode: No 
  • Package Type: TO-247-3 
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