HGTP7N60A4: IGBT, 600V, SMPS

Description: The HGTP7N60A4 combines the best features of high ...
  • The HGTP7N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS and welder.
  • Features
  • 14A, 600V @ TC = 110°C
  • Low Saturation Voltage : V CE(sat) = 1.9 V @ I C = 7A
  • Typical Fall Time. . . . . . . . . . 75ns at TJ = 125°C
  • Low Conduction Loss
  • Applications
  • Uninterruptible Power Supply
  • Technical Documentation & Design Resources
    Availability and Samples
    HGTP7N60A4
  • Status: Active, Not Rec
  • Compliance: Pb-free 
  • Description: IGBT, 600V, SMPS
  • Package Type: TO-220-3
  • Package Case Outline: 340AT
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 800
  • Inventory

  • Market Leadtime (weeks):Contact Factory
  • Arrow:0
  • Digikey:<1K
  • Newark:>1K
  • HGTP7N60A4-F102
  • Status: Active
  • Compliance: Pb-free 
  • Description: IGBT, 600V, SMPS
  • Package Type: TO-220-3
  • Package Case Outline: 221A
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 800
  • Specifications
  • V(BR)CES Typ (V): 600 
  • IC Max (A):  
  • VCE(sat) Typ (V):  
  • VF Typ (V):
  • Eoff Typ (mJ): 0.06 
  • Eon Typ (mJ): 0.055 
  • Trr Typ (ns):
  • Irr Typ (A):
  • Gate Charge Typ (nC): 37 
  • Short Circuit Withstand (µs):
  • EAS Typ (mJ): 25 
  • PD Max (W): 125 
  • Co-Packaged Diode:  
  • Package Type: TO-220-3 
  • ON Semiconductor Full Web Site