HUF75332P3: N-Channel UltraFET Power MOSFET 55V, 60A, 19mΩ

Description: These N-Channel power MOSFETs are manufactured usi...
  • These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.
    Formerly developmental type TA75332.
  • Features
  • 60A, 55V
  • Temperature Compensated PSPICE® and SABERTMModels
  • SPICE and SABER Thermal Impedance Models
  • Peak Current vs Pulse Width Curve
  • UIS Rating Curve
  • Related Literature
  • TB334, “Guidelines for Soldering Surface MountComponents to PC Boards”
  • Applications
  • Other Industrial
  • Technical Documentation & Design Resources
    Availability and Samples
    HUF75332P3
  • Status: Active
  • Compliance: Pb-free 
  • Description: N-Channel UltraFET Power MOSFET 55V, 60A, 19mΩ
  • Package Type: TO-220-3
  • Package Case Outline: 340AT
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 800
  • Inventory

  • Market Leadtime (weeks):2 to 4
  • Arrow:0
  • Digikey:<1K
  • Mouser:<1K
  • ON Semiconductor:4,800
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 55 
  • VGS Max (V): ±20 
  • VGS(th) Max (V):
  • ID Max (A): 60 
  • PD Max (W): 145 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ):
  • RDS(on) Max @ VGS = 10 V (mΩ): 19 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 40 
  • Ciss Typ (pF): 1300 
  • Package Type: TO-220-3 
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