HUF75639G3: N-Channel UltraFET Power MOSFET 100 V, 56 A, 25 mΩ

Description: These N-Channel power MOSFETs are manufactured usi...
  • These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.
  • Features
  • 56A, 100V
  • Temperature Compensated PSPICE® and SABER™ Electrical Models
  • SPICE and SABER Thermal Impedance Models
  • Peak Current vs Pulse Width Curve
  • UIS Rating Curve
  • Applications
  • AC-DC Merchant Power Supply - Servers & Workstations
  • Workstation
  • Server & Mainframe
  • Technical Documentation & Design Resources
    Availability and Samples
    HUF75639G3
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: N-Channel UltraFET Power MOSFET 100 V, 56 A, 25 mΩ
  • Package Type: TO-247-3
  • Package Case Outline: 340CK
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 450
  • Inventory

  • Market Leadtime (weeks):Contact Factory
  • Arrow:0
  • Digikey:<1K
  • Mouser:<1K
  • Newark:<100
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 100 
  • VGS Max (V): ±20 
  • VGS(th) Max (V):
  • ID Max (A): 56 
  • PD Max (W): 200 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ):
  • RDS(on) Max @ VGS = 10 V (mΩ): 25 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 57 
  • Ciss Typ (pF): 2000 
  • Package Type: TO-247-3 
  • ON Semiconductor Full Web Site