HUFA75307T3ST: N-Channel UltraFET Power MOSFET 55V, 2.6A, 90mΩ

Description: This N-Channel power MOSFET is manufactured using ...
  • This N-Channel power MOSFET is manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drives, relay drives, low-voltage bus switches, and power management in portable and battery-operated products.
    Formerly developmental type TA75307.
  • Features
  • 2.6A, 55V
  • Ultra On-Resistance, rDS(ON) = 0.090Ω
  • Diode Exhibits Both High Speed and Soft Recovery
  • Temperature Compensated PSPICE® Model
  • Thermal Impedance SPICE Model
  • Peak Current vs Pulse Width Curve
  • UIS Rating Curve
  • Related Literature
     - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”
  • Applications
  • Body Electronics
  • Comfort and Convenience
  • Infotainment
  • Portable Navigation
  • Power Train
  • Safety and Control
  • Vehicle Security Systems
  • Other Automotive
  • Other
  • Technical Documentation & Design Resources
    Availability and Samples
    HUFA75307T3ST
  • Status: Active
  • Compliance: AEC Qualified PPAP Capable Pb-free 
  • Description: N-Channel UltraFET Power MOSFET 55V, 2.6A, 90mΩ
  • Package Type: SOT-223-4 / TO-261-4
  • Package Case Outline: 318H-01
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 4000
  • Inventory

  • Market Leadtime (weeks):17 to 20
  • Arrow:0
  • Mouser:>1K
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 55 
  • VGS Max (V): ±20 
  • VGS(th) Max (V):
  • ID Max (A): 2.6 
  • PD Max (W): 1.1 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ):
  • RDS(on) Max @ VGS = 10 V (mΩ): 90 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 8.3 
  • Ciss Typ (pF): 250 
  • Package Type: SOT-223-4 / TO-261-4 
  • ON Semiconductor Full Web Site